Teacher Introduction:

Gao Tinghong, male, born in October 1984, is a professor, doctoral supervisor, master's supervisor, vice dean of the School of Big Data and Information Engineering at Guizhou University. He is a thousand level talent in Guizhou Province and a recipient of the National Hua Award and Excellence Award at Guizhou University. Guide graduate students in electronic science and technology, next-generation electronic information technology, big data engineering and technology, and integrated circuit engineering, mainly engaged in research on metal and semiconductor material calculation and simulation, material big data, semiconductor material design, big data and technology, big data visualization design, intelligent transportation, etc., and have published more than 80 papers in international journals, including 50 papers indexed by SCI. Has presided over 2 National Natural Science Foundation projects, 2 provincial-level key projects, and 6 other provincial-level projects. A large number of achievements have been made in the study of crystal material growth and material defect using computer simulation methods.

Email: gaotinghong@sina.com

Main experiences:

From 2013 to 2015, appointed Associate Professor at the School of Big Data and Information Engineering, Guizhou University

From 2016 to 2019, Associate Professor at the School of Big Data and Information Engineering, Guizhou University

From 2020 to present, Professor at the School of Big Data and Information Engineering, Guizhou University

Honors received:

2020 Guizhou University Guohua Award

Innovative Talents in Guizhou Province in 2019

Third Prize of Excellent Fund of Guizhou University in 2017

Honorary title of Outstanding Communist Party Member of the School of Big Data and Information Engineering from 2015 to 2016

Hosted projects:

1. National Natural Science Foundation of China Regional Fund, 62262021, Simulation Study on the Influence of Nucleus Structure Morphology and Evolution Characteristics on GaN Crystal Quality, 2013/01-2026/12, 330000 yuan, under research, led by

2. Key project of Guizhou Provincial Department of Science and Technology, Qiankehe Fundamentals ZK [2023] Key 013, Interface Behavior Research of Third Generation Semiconductor Material GaN and Graphene Composite Material, January 2023 to December 2026, 300000 yuan, under research, led by

3. Research project on major issues of the Guizhou Provincial Committee of the Communist Party of China for the year 2022, C029, 2022. Survey on the status of scientific and technological innovation work in the province, July 2022 to December 2022, with a total cost of 10000 yuan. Conclusion, led by

4. Key project of Guizhou Provincial Department of Science and Technology, Qiankehe Fundamentals ZK [2021] Key 051, High Performance Titanium Alloy Material Microstructural Data Extraction and Feature Technology, April 2021- April 2025, 300000 yuan, under research, in charge

5. Guizhou Provincial Department of Education, Thousand level Innovative Talents, Research on the Growth Morphology of SiC Crystal at Solid Liquid Interface, 2019/01-2021/12, 44000 yuan, Conclusion, Hosted

6. Regional Fund of the National Natural Science Foundation of China, 51761004,  of the Influence of Connectivity of Nanoclusters on the Mechanical Properties of TiAl Metal Glass, 2018/01-2021/12, 380000 yuan, Conclusion, Chair

7. Guizhou Provincial Department of Science and Technology Guizhou University Joint Fund, Qiankehe LH Zi [2016] No. 7430, Key Technology Research on Material Microstructural Characterization Based on Big Data, 2016/11-2018/11, 65000 yuan, Conclusion, Chair

8. Guizhou Provincial Science and Technology Fund, Qiankehe J Zi [2015] 2050, Simulation of Structure and Composition Design of High Performance Al Alloy Materials, 2015/08-2018, 80000 yuan, Conclusion, Hosted

Projects Participated in:

[1] National Natural Science Foundation of China, Project Name: Based on Environmentally Friendly Semiconductor Materials β- Design and Research of Optoelectronic Devices for FeSi2 and Mg2Si, Approval Number: 6126400420113.1-2016.12

[2] Special Fund for the Construction of Guizhou Province's Science and Technology Innovation Talent Team, Project Name: Guizhou Province Advanced Optoelectronic Materials and Technology Innovation Talent Team, Approval Number: Qiankehe Talent Team [2011] 4002

[3] Guizhou Province International Science and Technology Cooperation Program Project, Project Name: Research on Genetic Characteristics of Semiconductor Materials Si, Ge, and SiGe Alloy during Liquid Solidification Process, Approval Number: Qiankehewai G-Zi [2012] 7004

Recent published papers:

[1] Zhan Zhang, Tinghong Gao*, Lianxin Li, Yue Gao, Yutao Liu, Qian Chen, Quan Xie, Qingquan Xiao, Atomistic understanding towards twin boundary on the effect of crack propagation in FeNiCrCoCu high-entropy alloy and Ni, Materials today Communications, 2023, 34: 105414.  (三区)

[2] ZheTian Bian , Tinghong Gao *, Yutao Liu , Yue Gao , Jin Huang , Quan Xie , Qian Chen, Effects of different incidence rates of carbon and silicon clusters on the surface properties of SiC films, Surfaces and Interfaces, 2023, 37: 102718 (二区)

[3] Yue Gao, Quan Xie*, Tinghong Gao*, Wensheng Yang, Qian Chen, Zean Tian, Lianxin Li, Yongchao Liang, Bei Wang, Design of functionally graded TieAl alloy with adjustable mechanical properties: a molecular dynamics insights, Journal of Materials Research and Technology, 2023, 23: 258-267. (一区)

[4] Han Song, Tinghong Gao*, Yue Gao, Yutao Liu, Quan Xie, Qian Chen, Qingquan Xiao, Yongchao Liang, Bei Wang, Hall–Petch relationship in Ti3Al nano–polycrystalline alloys by molecular dynamics simulation, Journal of Materials Science, 2022,

[5] Lianxin Li, Tinghong Gao*,  of Structural Development and Defects during the Anisotropic Growth of Silicon, The Journal of Physical Chemistry B, 2022

[6] Tinghong Gao*, Zhetian Bian, Yue Gao, Bei Wang, Yutao Liu, Quan Xie, Qian, Chen, Qingquan Xiao, Yongchao Liang, Molecular dynamics simulations on the connectivity of topologically close-packed clusters in TiAl3 alloys, Physica Scripta, 2022,

[7] Tinghong Gao⁎, Han Song, Bei Wang, Yue Gao, Yutao Liu, Quan Xie, Qian Chen, Qingquan Xiao, Yongchao Liang, Molecular dynamics simulations of tensile response for FeNiCrCoCu high-entropy alloy with voids, International Journal of Mechanical Sciences, 2022, 107800。(一区)

[8] Zhetian Bian, Tinghong Gao*, Yue Gao, Bei Wang, Yutao Liu, Quan Xie, Qian Chen, Qingquan Xiao, Yongchao Liang, Effects of three-body diamond abrasive polishing on silicon carbide surface based on molecular dynamics simulations, Diamond & Related Materials, 2022, 129: 109368. (二区)

[9] Yinghao Wang, Lianxin Li, Tinghong Gao*, Yue Gao, Yutao Liu, Zhan Zhang, Qian Chen, Quan Xie, Crystallization behavior and defect on induction growth of hexagonal GaN in isothermal relaxation, Vacuum, 2022, 205: 111475. (二区)

[10] Tinghong Gao*, Zhan Zhang, Qian Chen, Jin Huang, Lianxin Li, Quan Xie, Qingquan Xiao, Yue Gao, Yutao Liu, Microstructure evolution of Si nanoparticles during the melting process: insights from molecular dynamics simulation, Materials Science in Semiconductor Processing, 2022, 152: 107038.

[11] Youtao Wu, Lianxin Li, Bei Wang, Zhongzhong Zhu, Tinghong Gao*, Quan Xie, Qian Chen, Qingquan Xiao, Rapid detection of Defect Structures in Graphene by the Machine Learning, Modern Physics Letters B, 2022, 15: 2250081.

[12] Yue Gao, Bei Wang, Jin Huang, Tinghong Gao*, Wensheng Yang, QuanXie, Qian Chen, Growth Pattern of Homogeneous and Heterogeneous Nucleation in High Entropy FeNiCrCoCu Alloys, CRYSTAL GROWTH & DESIGN, 2022, 22, 2417-2425. (二区)

[13] Lianxin Li, Tinghong Gao*, Quan Xie, Zean Tian. An of grain size and five-fold twins during rapid solidification processes inTi3Al alloy, RSC Advance, 2022, 12, 6440.

[14] Min Tan, Tinghong Gao*, Qingquan Xiao, Yue Gao, Yutao Liu, Quan Xie, Qian Chen, Zean Tian, Yongchao Liang, Bei Wang, Cascade mechan and mechanical property of the dislocation loop formation in GaN twin crystal-induced crystallization, Materials Science in Semiconductor Processing, 2022, 142, 106468.

[15] Yutao Liu, Tinghong Gao, Yue Gao, Lianxin Li, Min Tan, Quan Xie, Qian Chen, Yongchao Liang, Bei Wang, Evolution of defects and deformation mechani in different tensile directions of solidified lamellar Ti-Al alloy[J]. Chinese Physics B, 2022, 31, 046105.

[16] Zhen Liu, Lianxin Li, Tinghong Gao*, Quan Xie, Qian Chen, Yongchao Liang, Zean Tian, and Bei Wang, Different connection models of icosahedral structures in TiAl Alloy caused by the cooling rates, 2021, Phys. Status Solidi. B, 258, 2100083(1-8) 四区

[17] Min Tan, Tinghong Gao, Qinquan Xiao, Yue Gao, Yutao Liu, Qian Chen, Zean Tian, Yongchao Liang, Bei Wang. Simulation study on the diversity and characteristics of twin structures in GaN[J]. Superlattices and Microstructures, 2021, 159: 107037.

[18] Yutao Liu, Tinghong Gao*, Yue Gao, Lianxin Li, Min Tan, Quan Xie, Qian Chen, Yongchao Liang, Bei Wang, New phase transition pattern of fivefold twins transformed into lamellar structure in Ti3Al alloy[J]. CrystEngComm, 2021, 23, 6800-6809.

[19] Yue Gao, Tinghong Gao*, Lianxin Li, Quan Xie, Qian Chen, Zean Tian, Yongchao Liang, Bei Wang, Evolution of dislocation and twin structures in Ti3Al during solidification[J]. Vacuum, 2021, 194:110525.

[20] Lianxin Li, Tinghong Gao*, Quan Xie, Qian Chen, Zean Tian, Yongchao Liang, Bei Wang, Pleomorph and multidirectional combination of Si crystal nucleation during solidification, Journal of Materials Science, 2021, 56(28): 15960-15970.

[21] Yue Gao, Wanjun Yan, Tinghong Gao*, Qian Chen, wensheng Yang, Quan Xie, Zean Tian, Yongchao Liang, Jun Luo, Lianxin Li, Properties of the structural defects during SiC-crystal-induced crystallization on the solid-liquid interface, Materials Science in Semiconductor Processing, 2020, 116, 105155

[22] Jun Luo, Tinghong Gao*, Lianxin Li, Quan Xie, Zean Tian, Qian Chen, Yongchao Liang, Formation of defects during fullerene bombardment and repair of vacancy defects in graphene, Journal of Materials Science, 2019, 54, 14431-14439.

[23] Jun Luo, Tinghong Gao*, Lei Ren, Quan Xie, Zean Tian, Qian Chen, Yongchao Liang, Segregation phenomena of As in GaAs at different cooling rates during solidification, Materials Science in Semiconductor Processing, 2019, 104: 104680.

[24] Lei Ren, Tinghong Gao*, Rui Ma, Quan Xie, Zean Tian, Qian Chen, Yongchao Liang, Xuechen Hu. The connection of icosahedral and defective icosahedral clusters in medium-range order structures of CuZrAl alloy, Journal of Non-Crystalline Solids, 2019, 521: 119475. (SCI收录)

[25] Lei Ren, Tinghong Gao*, Rui Ma, Quan Xie, Xuechen Hu. The icosahedral short-range order and its local structures in Cu50Zr40Al10 alloy, Materials Research Express, 2019, 6(1): 016510. (SCI收录)

[26] Tinghong Gao*, Kaiwen Li, Yidan Li, Xuechen Hu, Lei Ren, Xiangyang Luo, Quan Xie. Crystalline structures and defects in liquid GaN during rapid cooling processes, Materials Science in Semiconductor Processing, 2018, 74: 46-50. (SCI收录)

[27] Tinghong Gao*, Yidan Li, Quan Xie*, Zean Tian, Qian Chen, Yongchao Liang, Lei Ren, Xuechen Hu, Structural properties and defects of GaN crystals grown at ultra-high pressures: A molecular dynamics simulation, Superlattices and Microstructures, 2018, 113:644-649. (SCI收录)

[28] Tinghong Gao*, Kaiwen Li, Zean Tian, Quan Xie*, Xuechen Hu, Yidan Li, Xiangyan Luo, and Lei Ren. Properties of polycrystals and nanotwinned structures in silicon during rapid cooling process, Materials Research Express, 2017, 4: 115902. (SCI收录)

[29] Tinghong Gao*, Yidan Li, Zhenzhen Yao, Xuechen Hu, Quan Xie. Properties of tetrahedral clusters and medium range order in GaN during rapid solidification, Superlattices and Microstructures, 2017, 112: 528-533. (SCI收录)

[30] Tinghong GAO*, Xuechen HU, Quan XIE*, Yidan LI, Lei REN. Structural properties of medium-range order in CuNiZr alloy, Materials Research Express, 2017, 4: 106515. (SCI收录)

[31] Tinghong Gao*, Xuechen Hu, ZeanTian, Quan Xie, Qian Chen, Yongchao Liang, Xiangyang Luo, Lei Ren, Jun Luo, Microstructural properties and evolution of nanoclusters in liquid Si during rapid cooling process, JETP Letters, 2017, 10: 642-643. (SCI收录)